IRPS 2021 Invited Speakers:

Wide-Bandgap Semiconductors- GaN

• 2B.1 (Invited) Progress and Current Topics of JEDEC JC-70.1 Power GaN Device Quality and Reliability Standards Activity

  • Tim McDonald, Infineon, Chair, JEDEC JC-70.1 / Stephanie Watts Butler, Texas Instruments, Chair, JEDEC JC-70

Neuromorphic Computing Reliability

• 2C.1 (Focus) Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)

  • Daniele Ielmini, Politecnico di Milano

• 2C.2 (Focus) Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability

  • Yao-feng Chang, Intel

• 2D.1 (Focus) Can Emerging Computing Paradigms Help Enhancing Reliability Towards the End of Technology Roadmap?

  • Runsheng Wang, Peking University

RF/mmW/5G Reliability

• 3B.1 (Focus) New Developments in SiGe HBT Reliability for RF Through mmW Circuits

  • John Cressler, Georgia Tech

• 3B.2 (Focus) Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

  • Michael Dammann, Fraunhofer Institute IAF

• 3E.1 (Focus) CMOS RF reliability for 5G mmWave applications – Challenges and Opportunities

  • Purushothaman Srinivasan, GlobalFoundries

• 3E.2 (Focus) Guidelines for Space Qualification of Gan HEMTs and MMICs

  • John R. Scarpulla, The Aerospace Corporation

Soft Error

• 3D.1 (Invited) Single Event Hard Error Due to Terrestrial Radiation

  • Jin-Woo Han, NASA Ames Research Center

Metallization/BEOL Reliability

• 3F.1 (Invited) Back End Of Line Opportunities and Reliability Challenges for Future Technology Nodes

  • Mauro Kobrinsky, Intel Corporation

Memory Reliability

• 3H.1 (Invited) Challenges of Flash Memory for Next Decade

  • Kazunari Ishimaru, Kioxia

Circuit Reliability and Aging

• 4A.1 (Invited) Silicon Lifecycle Management with in-chip Monitoring

  • Rajesh Kashyap, Synopsys

Packaging and 2.5/3D Assembly

• 4D.1 (Invited) Reliability of Optoelectronic Module: An overview

  • John Osenbach, Infinera

Emerging Memory Reliability

• 5B.1 (Focus) Reliability of STT-MRAM for Various Embedded Applications

  • Shinhee Han, Samsung Electronic

• 5D.1 (Focus) Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories

  • Thomas Mikolajick, NamLab and IHM, TU Dresden

• 5D.2 (Focus) Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices

  • Sayeef Salahuddin, UC Berkeley

• 5B.2 (Focus) Challenges toward Low-Power SOT-MRAM

  • Shy-Jay Lin, TSMC

Wide-Bandgap Semiconductors- SiC

• 5C.1 (Invited) Is There a Perfect SiC MOSFET Device on an Imperfect Crystal?

  • Thomas Neyer, ON Semiconductor

• 5C.5 (Invited) Space Radiation Effects on SiC Power Device Reliability

  • Jean-Marie Lauenstein, NASA Goddard Space Flight Center