IRPS

2019 IRPS Reliability Year in Review

The 2019 IRPS Reliability Year in Review will take place on Monday, April 1st, at 2:30 – 5:00 pm.

TimeTitleSpeaker
2:30 - 3:20 pm NBTI/PBTI: State-of-the-artTibor Grasser, TU Wien
3:40 - 4:20 pmMetallization reliabilityJames Lloyd, SUNY Polytechnic Institute
4:20 - 5:00 pmFunctional Safety, reliability, availabilityRiccardo Mariani, Intel Corporation Italia

NBTI/PBTI: State-of-the-art

During the past decade bias temperature instabilities (BTI) have retained their center-stage position as one of the most relevant reliability issues in modern MOS transistors. While positive BTI (PBTI) has occasionally received a lot of attention after the introduction of new high-k dielectrics, it is negative BTI (NBTI) which appears to be dominant for well optimized gate stacks. Following a brief historical review on the history of BTI, recent developments are summarized and discussed, such as the various new measurement methods and attempts in explaining this elusive phenomenon.  In particular, the long-lasting controversy on whether diffusion- or reaction-limited processes are responsible for BTI has gained new momentum during the previous years and the state of the discussion will be summarized.

Prof. Tibor Grasser is an IEEE Fellow and head of the Institute for Microelectronics at TU Wien.  He has numerous reliability-related publications, edited various books, e.g. on the bias temperature instability and hot carrier degradation (both Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).  He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment for Microelectronics Reliability (Elsevier).

Metallization reliability

With new materials replacing the traditional Cu metallization,  back end reliability is taking on a new face.  Cobalt and other exotic schemes are exciting and enabling improvements in performance and reliability.  The latest results will be reviewed in this presentation.

Over 50 years experience in reliability physics, concentrating on back end conductors and dielectrics.  From IBM, Digital Equipment Corporation, Max-Planck-Institut, Jet Propulsion Laboratory and now SUNY Polytechnic Institute, Dr. Lloyd has made many contributions to the understanding of metallization and TDDB related reliability.  He is now active in education and continuing research into these important issues.

Functional Safety, reliability, availability

The new world of autonomous vehicles (AV) is posing many challenges to automotive safety. The new world of autonomous vehicles (AV) and SW defined industrial systems (SDIS) is posing many safety, reliability and availability challenges to automotive and industrial equipment and eventually to semiconductor industry. The talk will be a 2 years perspective on the status of functional safety publications, with specific emphasis on ISO 26262, ISO 21448 (SOTIF), cybersecurity and other related topics (such as Availability and Responsibility Sensitive Safety).

Riccardo Mariani is an Intel Fellow and the chief functional safety technologist in the Internet of Things Group at Intel Corporation. He is responsible for defining strategies, roadmaps and technologies for Internet of Things applications that require functional safety and high performance, including transportation and industrial systems. He is also the functional safety global domain lead for Intel’s CISA Architecture Working Model Initiative. Mariani joined Intel in 2016 with the acquisition of Yogitech S.p.A., a leading provider of functional safety technologies.