The effects of radiation on the terrestrial operation of SiC MOSFETs – Bakin Akturk, CoolCAD
Reliability Challenges in 2.5D Packaging and Embedded Silicon Bridge – Emre Armagan, Intel
Protective nanometer films for reliable Cu-Cu connections – Berthold, Fraunhofer
p-GaN gate reliability including short-circuit robustness – Alberto Castelazzi, Univ. Nottingham
SiC Power MOSFET Gate Oxide Breakdown Reliability – Current Status – Charles Cheung, NIST
Reliable and damage-resistant optics and detectors for x-ray free-electron lasers – Stefan Hau-Riege, Lawrence National Laboratory
Next Generation Interconnect Reliability Metallization Integration – Chao-Kun Hu, IBM
Reliability of MEMS sensors through self calibration – Amit Lal, Cornell University
Reliability Studies of SiC Vertical Power MOSFETs – Daniel J. Lichtenwalner, Wolfspeed
Exascale Fault Tolerance Challenge and Approaches – Cameron McNairy, Intel
Reliability issues of GaN commercialization – Umesh Mishra, UC Santa Barbara
Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices – Christian Monachon, Attolight
COTS Electronics Reliability for Space Applications – Jonny Pellish, NASA
System level ESD and its implications on I/O protection – David Pommerenke, Missouri University of Science and Technology
Reliability Challenges on 2.5D/3D chip integration – an Overview – C S Premachandran, Global Foundries
Airplane Systems Design for Reliability & Quality – Anapathur Ramesh, Boeing
Recent Advances in In-situ and In-field Aging Monitoring and Compensation for Integrated Circuits – Mingoo Seok, Columbia University
Role of electron and hole trapping in degradation and breakdown of oxide films – Alex Shluger, University College, London
Permanent shunting from passing shadows: Reverse-bias damage in thin-film photovoltaic modules – Timothy Silverman, NREL
Defects Affecting SiC Power Device reliability – Bob Stahlbush, NRL
The Physics of NBTI: What Do We Really Know? – Jim Stathis, IBM
Estimating transistor channel temperature using time-resolved and time-integrated NIR photoemission – Franco Stellari, IBM
Reliability perspective of resistive synaptic devices on the neuromorphic system performance – Shimeng Yu, Arizona State University