Abstract: As device scaling continues, parasitic source resistance largely dominated by contact resistance is beginning to limit the device performance. While novel structures and materials have enhanced the transistor performance, the opposite is true for the interconnects that link these transistors. This talk will address effects of scaling on the performance of conventional contacts and interconnects, and explore alternate contact and interconnect schemes
Biography: Prof. Krishna Saraswat is Rickey/Nielsen Professor in the School of Engineering, Professor of Electrical Engineering and by courtesy Professor of Materials Science & Engineering at Stanford University.
He received his B.E. degree in Electronics in 1968 from BITS, Pilani, India, and his M.S. and Ph.D. degrees in Electrical Engineering in 1969 and 1974 respectively from Stanford University, Stanford, CA. During 1969-70, he worked at Texas Instruments. After graduating he joined Stanford University as a Research Associate in 1975 and later became a Professor of Electrical Engineering in 1983. He also has an honorary appointment of an Adjunct Professor at BITS, Pilani, India since January 2004.
His research interests are in new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors and memories to nanometer regime, 3-D ICs, optical interconnections and high efficiency and low cost solar cells.
He has supervised more than 85 doctoral students, 30 post doctoral scholars and has authored or co-authored 15 patents and over 790 technical papers. He is a Life Fellow of the IEEE. He received the Thomas Callinan Award from The Electrochemical Society in 2000, the 2004 IEEE Andrew Grove Award, Inventor Recognition Award from MARCO/FCRP in 2007, the Technovisionary Award from the India Semiconductor Association in 2007, BITS Pilani Distinguished Alumnus Awards in 2012 and the Semiconductor Industry Association Researcher of the Year Award in 2012. He is listed by ISI as one of the Highly Cited Authors in his field.