ES-1 Long-Term Reliability of a Hard-Switched Boost Power Processing Unit utilizing SiC Power MOSFETs
S. Ikpe, J.-M. Lauenstein, G. Carr*, D. Hunter*, L. Ludwig, W. Wood, C. Iannello, L. Del Castillo*, F. Fitzpatrick, M. Mojarradi, Y. Chen, NASA, *Jet Propulsion Laboratory California Institute of Technology
With the expedient maturation of Silicon-Carbide (SiC) device technology, a great deal of interest has been generated in the development of switching power applications capable of harnessing the inherent wide-bandgap (WBG) properties of the material. SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) in particular, offer significant benefit over their Silicon counterparts. The potential for lower total switching losses, higher breakdown field tolerance and superior thermal performance make SiC devices highly attractive for both high temperature and extreme environment applications. Though successful power conversion implementations show promise , these noteworthy device innovations have yet to directly translate into pragmatic power conversion systems. Therefore, it is still necessary to evaluate the application-specific performance of these devices to fully understand thermal limitations as well as estimate the overall device reliability. This paper describes a design-for-reliability approach for an innovative power processing architecture intended for in-space solar electric propulsion (SEP) systems. The work herein also presents reliability data on CREE’s commercially available N-channel enhancement mode SiC MOSFETs.