IRPS

Session 7B – Failure Analysis

Session 7B – Failure Analysis

Session Chair: Abdullah Yassine, AMD
Section E

1:25 p.m. – Session Introduction

1:30 p.m.

7B.1 Spontaneous Photon Emission from 32 nm and 14 nm SOI FETs

F. Stellari, A. Ruggeri, A. B. Shehata, H. Ainspan, P. Song, IBM TJ Watson Research Center

The very faint spontaneous near-infrared photon emission of scaled SOI FETs (32 nm planar and 14 nm FinFET) is characterized and modeled for the first time. Novel higher sensitivity detectors are leveraged to measure emission at low operating voltages including sub-threshold and linear regions that are extremely faint. Furthermore, the effect of device threshold was studied for the first time and a model explaining the data is presented.

1:55 p.m.

7B.2 Dynamical Observation of H-induced Gate Dielectric Degradation through Improved Nuclear Reaction Analysis System

Y. Higashi, R. Takaishi, M. Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto*, K. Kato*, S.Ogura*, K. Fukutani*, Toshiba Corporation, *University of Tokyo

The Nuclear Reaction Analysis (NRA) system was successfully improved in terms of the control of dynamic hydrogen migration and reducing background noise. The proposed new system achieved nondestructive measurements of the hydrogen depth profile with a detection limit of less than 3×1019 atoms/cm3. Secondary Ion Mass Spectrometry and NRA with this system were compared in the analysis of the hydrogen depth profile in gate dielectric for the first time and superiority of NRA was demonstrated. In addition, we successfully demonstrated that dynamic hydrogen migration in gate dielectric is strongly correlated with generation of both bulk defects and interface defects of gate dielectrics.

2:20 p.m.

7B.3 Transient Thermometry and HRTEM Analysis of RRAM Thermal Dynamics during Switching and Failure

J. Kwon, A. Sharma, C.-Y. Chen*, A. Fantini*, M. Jurczak*, Y. Picard, J. Bain, M. Skowronski, Carnegie Mellon University, *imec

We investigate RRAM thermal dynamics during resistive switching and endurance failure by using transient thermometry and HRTEM analysis. The filament size was estimated to ~1 nm with 7-15 nm crystalline region, having experienced local temperatures of > 1600 K at the filament core and > 850 K in the heat affected zone. The devices that underwent cold switching show no change in the HfAlOx microstructure, postprogramming. However, such devices show preferential templated growth of HfAlOx crystallite, extending from the polycrystalline Hf layer after 107 switching cycles, eventually culminating in a RESET failure.

2:45 p.m.

7B.4 NVM Cell Degradation Induced by Femtosecond Laser Backside Irradiation for Reliability Tests

V. Della Marca, M. Chambonneau*, S. Souiki-Figuigui**, J. Postel-Pellerin**, P. Canet**, P. Chiquet**, D. Grojo*, F. Yengui^, R. Wacquez^, E. Kussener, J.-M. Portal**, M. Lisart^^, IM2NP-ISEN, CNRS, UMR, *Aix-Marseille Université, CNRS, LP3, **Aix-Marseille Université, IM2NP,CNRS, ^CEA-Tech, ^^STMicroelectronics

The market of the smart connected objects is growing up driven by the incessant ideas of the new worldwide startuppers and developers. The silicon founders need to find new very reliable and low costs solutions in order to provide high performance electronic circuits for the embedded applications. In this context the nonvolatile memories play a key role for the systems on chip (SoC). In this paper we show for the first time, to our knowledge, the effects of a femtosecond laser beam on a single isolated nonvolatile Flash floating gate memory cell. We show here the possibility to program and damage a memory cell by a contactless injection of free charges. This technique can be used in the failure analysis in-line tests, or after the fabrication as a parametric measurement, improving the investigation time, or to emulate radiative effects on NVM.